Lecture, three hours; discussion, one hour; outside study, eight hours. Recommended preparation: Electrical Engineering 221B. Requisites: courses 130, 131, 200, 221, 222. Selected topics in materials science from modern Si-CMOS technology, including technological challenges in high k/metal gate stacks, strained Si FETs, SOI and three-dimensional FETs, source/drain engineering including transient-enhanced diffusion, nonvolatile memory, and metallization for ohmic contacts. Letter grading.

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Course

Instructor
Ya-Hong Xie
Previously taught
22F 22W 18F 17F 17S 16S 15S 14S 13S 10S 08S 07S 06S

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