Lecture, four hours; outside study, eight hours. Designed for graduate chemistry or engineering students. Application of chemistry, physics, and engineering principles to design and operation of plasma and ion-beam reactors used in etching, deposition, oxidation, and cleaning of materials. Examination of atomic, molecular, and ionic phenomena involved in plasma and ion-beam processing of semiconductors, etc. Letter grading.

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Course

Instructor
Robert Hicks
Previously taught
09W
Formerly offered as
CHM ENG 234

Previous Grades

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